PART |
Description |
Maker |
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 30V N-Channel PowerTrench MOSFET
|
|
GT8Q102SM |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-252VAR 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 8A条一(c)|52VAR
|
Panasonic Industrial Solutions
|
APT30GL100BN |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 30A条一(c)|47
|
Won-Top Electronics Co., Ltd.
|
OM6556SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区
|
Mitsubishi Electric, Corp.
|
ITS18F03B |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 36A I(C) | TO-220AB 晶体管| IGBT的|正陈| 300V五(巴西)国际消费电子展|6A一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 58A条一(c)|64AA
|
IXYS, Corp.
|